IRFP260NPBF Transistor - N-MOSFET 200V 35A 300W (TO247AC) Vognmand Helmholt Very high efficiency & low

Description

Very high efficiency & low energy consumption

og opladningstiden er kun 5 timer

stål (800 N/mm²)

the RD6012 is highly integrable and ideally suited for your own projects

hvilket gør den til det ideelle valg for dem

IRFP260NPBF Transistor - N-MOSFET 200V 35A 300W (TO247AC) Vognmand Helmholt Very high efficiency & lowTekniske detaljer: Producent (varemrke): INFINEON TECHNOLOGIES Transistortype: N MOSFET Teknologi: HEXFET Polarisering: Unipolr Drain source spnding (VDS): 200V Kontinuerlig drnstrm (ID): 35A Effektafledning (PD): 300W Hus: TO247AC Gate source spnding (VGS): 20V On state modstand (RDS(on)): 40 mOhm Montering: Printhul Portladning: 234nC Type kanal: Forbedret Specifications: Manufacturer: INFINEON TECHNOLOGIES Type of transistor: N MOSFET Technology:

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